Name
Title | ||
|---|---|---|
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance |
Abstract | ||
|---|---|---|
The post-breakdown conduction properties of ultrathin SiON layers were investigated, to determine the impact of various parameters on the growth of a breakdown path after its formation. Post-breakdown conduction is seen to be dependent on stress voltage used to break the oxide, the stress temperature, and the time-to-breakdown. With this knowledge, the performance of transistors of various channel lengths and widths was studied both before and after breakdown occurred to determine whether the devices still function as a digital switches after breakdown. That is, the drain to source current (Ids) in the on–state (Vg≫Vth) is much larger than Ids in the off–state (Vg<Vth), allowing the device to continue to function as a switch, after breakdown occurs. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1016/j.microrel.2004.10.027 | Microelectronics Reliability |
Field | DocType | Volume |
Electric stress,Oxide,Dielectric,Current source,Voltage,Stress (mechanics),Electronic engineering,Thermal conduction,Engineering,Transistor | Journal | 45 |
Issue | ISSN | Citations |
5 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 1 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Robert O’Connor | 1 | 0 | 1.01 |
| Greg Hughes | 2 | 0 | 1.01 |
| Robin Degraeve | 3 | 7 | 3.20 |
| Ben Kaczer | 4 | 49 | 12.50 |