Name
Abstract | ||
|---|---|---|
We have investigated electrical properties of a chalcogenide-based device with naturally oxidized Al electrodes. Intermediate-resistance (IR) states exhibited by current-voltage (I-V) characteristics, dynamic resistance change as a function of pulse height and decay behavior from a low-resistance state of such a device make multi-state storage feasible. These IR states could be induced by electrical pulses and stable in a period. Device resistances of such a series of states might be related to the number of dendrite filaments across the chalcogenide channel. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1016/j.mejo.2007.05.003 | Microelectronics Journal |
Keywords | Field | DocType |
dynamic resistance change,chalcogenide channel,decay behavior,multi-state storage,device resistance,chalcogenide-based device,dendrite filament,electrical property,electrical pulse,ir state,al electrode,chalcogenide,memory | Chalcogenide,Communication channel,Electronic engineering,Engineering,Electrode,Dendrite,Dynamic resistance,Pulse height | Journal |
Volume | Issue | ISSN |
38 | 6-7 | Microelectronics Journal |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| You Yin | 1 | 0 | 1.35 |
| Hayato Sone | 2 | 0 | 0.34 |
| Sumio Hosaka | 3 | 0 | 1.35 |