Paper Info
Title
Parameter characterization of anodic bonded electrical interconnect in MEMS/NEMS devices
Abstract
The approach to realize the electrical interconnect and qualities of the contact have a direct impact on the performance and reliability of devices. Herein, Si-Au/Pt/Ti contact structure is fabricated using anodic bonding as a novel approach to realize the electrical interconnect. In order to evaluate the qualities of the anodic bonded contact, the contact resistance is extracted. The cross-bridge Kelvin method is optimized and a new method is presented to directly measure the contact resistance, named four-terminals bonded vertical Kelvin method (BVD). The two-dimensional resistor network model of the BVD method indicates that the relationship between the contact resistance and the measured resistance can be easily established. The BVD method can directly and precisely measure the contact resistance since kinds of interferences from parasitic resistances are minimized. Data obtained from the test indicate that the anodic bonded contact is Ohmic contact when the area of the contact is larger than 15*20 mum2 with the contact length not smaller than 15 mum; whereas, the contact is not Ohmic contact and not stable when the area of the contact is smaller than 15*20 mum2. The qualities of small-size anodic bonded contact is related with the effects of interfacial states, native oxide layer, series resistances at the interface, and the other particularities such as interfacial inter-diffusion, Au/Si eutectic reaction and surface topology.
Year
DOI
Venue
2009
10.1109/NEMS.2009.5068558
NEMS
Keywords
Field
DocType
four-terminals bonded vertical kelvin method,titanium,series resistance,interfacial states,contact length,gold,ohmic contact,nems device,parasitic resistance,micromechanical devices,surface topology,parameter characterization,two-dimensional resistor network model,semiconductor-metal boundaries,chemical interdiffusion,bvd method,contact structure,interface states,cross-bridge kelvin method,series resistances,ohmic contacts,measured resistance,bonded vertical kelvin method,native oxide layer,platinum,interconnections,surface topography,silicon,anodic bonded contact,ti contact structure,si-au-pt-ti,parasitic resistances,nanoelectromechanical devices,eutectic reaction,elemental semiconductors,interfacial interdiffusion,contact resistance,electrical interconnect,new method,resistors,anodic bonding,network model,kelvin
Contact resistance,Composite material,Microelectromechanical systems,Anodic bonding,Anode,Resistor,Interconnection,Materials science,Silicon,Ohmic contact
Conference
ISSN
ISBN
Citations 
2474-3747
978-1-4244-4630-8
0
PageRank 
References 
Authors
0.34
0
2
Name
Order
Citations
PageRank
Xuejiao Fan100.68
Dacheng Zhang23212.02