Name
Abstract | ||
|---|---|---|
Schottky diodes may be realized by various techniques, depending on application and processing technology. M/A-COM has recently developed an enhancement/depletion (E/D) pHEMT process, used primarily for control circuits around its mature RF circuitry. We report here a reliability study of two diodes (configured using E-FETs), subjected to both high temperature and forward bias accelerated stress. Different failure modes observed during accelerated life tests of the two diode configurations are discussed, and the causes for aging are analyzed. Results of the stress test are backed by equivalent circuit modeling using ADS™. The differences in the effect of these failure modes on circuit performance are discussed. |
Year | DOI | Venue |
|---|---|---|
2006 | 10.1016/j.microrel.2006.02.005 | Microelectronics Reliability |
Keywords | Field | DocType |
accelerated aging test,schottky barrier diode,ageing,field effect transistor,reliability,stress testing,modeling,failure mode,high electron mobility transistor,equivalent circuit,schottky diode,accelerated life testing,durability | Field-effect transistor,Diode,Electronic engineering,Accelerated aging,Schottky diode,Engineering,Circuit performance,High-electron-mobility transistor,Electronic circuit,Equivalent circuit | Journal |
Volume | Issue | ISSN |
46 | 8 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shivarajiv Somisetty | 1 | 0 | 0.68 |
| P. Ersland | 2 | 6 | 4.23 |
| Xinxing Yang | 3 | 6 | 1.97 |
| Jason Barrett | 4 | 0 | 0.34 |