Paper Info
Title
Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory
Abstract
In this paper, one of the future nonvolatile memory candidates, SONOS with p+-poly gate, has been fully characterized in cell program/erase operation and data retention performance. Novel source-side injection programming and F-N erase schemes have been utilized on both n+- and p+-poly gate, and its characteristics are very satisfactory and can be easily used as a state-of-the-art flash memory. For data retention, our experimental result shows p+-poly does have a slower charge decay rate than does n+-poly gate. This is because of the work function difference between n+- and p+-poly gate that causes the different amount of trapped electrons between two of them. We also predict the charge loss characteristics with various baking temperature for n+- and p+-poly gate, which can tell us the concrete threshold voltage at any read delay time instead of the traditional and inaccurate long time projection from short time status.
Year
DOI
Venue
2006
10.1109/MTDT.2006.10
MTDT
Keywords
Field
DocType
data retention,inaccurate long time projection,poly gate,charge loss characteristic,short time status,state-of-the-art flash memory,read delay time,future nonvolatile memory candidate,detailed comparisons,poly sonos nand flash,data retention performance,slower charge decay rate,data retention characteristics,threshold voltage,work function,nonvolatile memory,decay rate
Nand flash memory,Work function,Flash memory,Charge decay,Data retention,Computer science,Parallel computing,Electronic engineering,Charge loss,Non-volatile memory,Threshold voltage
Conference
ISBN
Citations 
PageRank 
0-7695-2572-5
0
0.34
References 
Authors
0
10
Name
Order
Citations
PageRank
Victor Chao-Wei Kuo100.34
Chih-Ming Chao221.51
Chih-Kai Kang3262.90
Li-Wei Liu400.34
Tzung-Bin Huang500.68
Liang-Tai Kuo600.34
Shi-Hsien Chen700.34
Houng-Chi Wei800.68
Hann-Ping Hwang901.01
Saysamone Pittikoun1000.68