Title
Voltage Stress-Induced Performance Degradation In Nmosfet Mixer
Abstract
This paper presents an insight into the performance degradation in Gilbert mixer due to the voltage stress-induced hot carrier effects. Analytical analysis relates the performance degradation with the model parameter shifts caused by voltage stress. The stress-induced parameter shifts are examined experimentally. Performance degradation in mixer is investigated through Spectre-RF simulation with the models extracted from measured data.
Year
DOI
Venue
2005
10.1587/elex.2.133
IEICE ELECTRONICS EXPRESS
Keywords
Field
DocType
CMOS integrated circuits, hot carrier, stress, noise, gain, linearity
Computer science,Linearity,Voltage,Degradation (geology),Electronic engineering,CMOS,Model parameter,Gilbert mixer
Journal
Volume
Issue
ISSN
2
5
1349-2543
Citations 
PageRank 
References 
1
0.42
2
Authors
4
Name
Order
Citations
PageRank
Chuanzhao Yu1337.05
Hong Yang210.76
Enjun Xiao311.09
J. S. Yuan4317.21