Paper Info
Title
A 10Gb/s 6Vpp differential modulator driver in 0.18μm SiGe-BiCMOS
Abstract
This paper describes a 10Gb/s, digitally-controlled distributed amplifier (DA) implemented in 0.18μm SiGe (60GHz peak-fT) with 6Vpp differential output swing, <;20ps symmetric rise/fall times, negligible additive jitter and >10dB return loss across 30GHz bandwidth; performance suitable for driving a dual (i.e., balanced) MZ modulator. Unlike conventional DAs, which use a passive transmission line at the input to feed each amplifier cell with the correct signal phase, the gain cells in the prototype modulator driver are driven by digital latches. The fully-digital interface at the DA input leads to a scalable design by eliminating the performance impairments of the input transmission line.
Year
DOI
Venue
2013
10.1109/ISSCC.2013.6487669
ISSCC
Keywords
DocType
ISSN
driver circuits,SiGe,semiconductor materials,bit rate 10 Gbit/s,voltage 4 V to 10 V,BiCMOS integrated circuits,optical modulation,transmission lines,passive transmission line,frequency 30 GHz,MZ modulator,digital latches,digitally-controlled distributed amplifier,differential modulator driver,BiCMOS process,Ge-Si alloys,fully-digital interface,optical fibre amplifiers,integrated optoelectronics,amplifier cell
Conference
0193-6530
ISBN
Citations 
PageRank 
978-1-4673-4515-6
0
0.34
References 
Authors
0
4
Name
Order
Citations
PageRank
Yi Zhao101.35
Leonardo Vera221.26
John R. Long333650.48
David L. Harame42710.01