Paper Info
Title
Microwave active resonator band-pass filters in various mmic technologies
Abstract
In this article, two topologies of L-C parallel active resonators are presented. These circuits are realized in MMIC technology, rising three transistors which could be MESFET, HEMT Or HBT. The survey of these resonators shows the possibility, by controling the values of a resistor and/or a capacitor, on the one hand, to time the resonance frequency of these circuits, and on the other hand to cancel out their losses seas to obtain negative conductance. Compact lossless and narrow-band filters are then implemented using previous active resonators. To date, the use of MESFET technology has reduced the synthesis of such active filters in S-band and at X-band low frequencies. Now, however; HEMT and HBT technologies allow the extension of their implementation to the whole X-band. This survey is illustrated by the simulated response of a 10 GHz filter with a 500 MHz 3 dB bandwidth. The MMIC technology is a 0.2 mu m HEMT one. The simulated performances of this filter achieve a mean transmission gain of 0.5 dB, with a reflection loss higher than 10 dB at 10 GHz.
Year
DOI
Venue
1998
10.1007/BF02997623
ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS
Keywords
Field
DocType
band pass filter,active filter,microwave filter,microwave integrated circuit,monolithic integrated circuit,LC circuit,negative resistance,metal semiconductor field effect transistor,two dimensional electron gas transistor,bipolar transistor,heterojunction transistor
LC circuit,Active filter,Band-pass filter,Resonator,Electronic engineering,Bandwidth (signal processing),Monolithic microwave integrated circuit,High-electron-mobility transistor,MESFET,Electrical engineering,Mathematics
Journal
Volume
Issue
ISSN
53
1-2
0003-4347
Citations 
PageRank 
References 
0
0.34
0
Authors
3
Name
Order
Citations
PageRank
Hervé Simon100.34
Jean-Pierre Le Normand243.16
Robert Alain Périchon300.34