Title
Raman approach in silicon nanostructure at 1.5 micron.
Abstract
In the last three years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved significant results. However, limitations inherent to the physics of silicon have been pointed out, too. In order to overcome these limitations, a possible option is to consider low dimensional silicon. In this paper, an approach based on Raman scattering in porous silicon is theoretically and experimentally investigated. We prove two significant advantages with respect to silicon: the broadening of the spontaneous Raman emission and the tuning of the Stokes shift. Finally, we discuss about the prospect of Raman amplifier in porous silicon.
Year
Venue
Keywords
2007
Nano-Net
spontaneous raman emission,light generation,raman approach,significant result,porous silicon,significant advantage,silicon nanostructure,stokes shift,raman emission,raman scattering,low dimensional silicon,raman amplifier,nonlinear optics,raman effect
Field
DocType
Citations 
Analytical chemistry,Porous silicon,Hybrid silicon laser,Stokes shift,Raman scattering,Silicon photonics,Raman spectroscopy,Materials science,Optoelectronics,Silicon,Coherent anti-Stokes Raman spectroscopy
Conference
0
PageRank 
References 
Authors
0.34
0
4
Name
Order
Citations
PageRank
L. Sirleto100.68
M. A. Ferrara200.34
B. Jalali300.34
Ivo Rendina434.02