Title
Design of a fully integrated CMOS dual K- and W-band lumped wilkinson power divider
Abstract
A novel design of an on-chip dual-band Wilkinson power divider (DWPD) working at 24 and 77 GHz (K- and W-band) which could be used in the automotive radar system in 65 nm CMOS technology is presented in this paper. The proposed structure is composed of two on-chip inductors and five capacitors. It has the following advantages: (1) constructing a quasi λ/4 transmission line by LC networks, the divider could operate in two frequency bands; (2) as only two inductors are needed in the design, the chip area is remarkably compact, with a die size of only 200 μm × 450 μm, and (3) the structure is symmetrical. Rigorous analysis and equations are given. With the new method, the miniaturized DWPD demonstrates an excellent performance: S11, S22, S23 and S33 are all suppressed down to -15 dB, and the insertion loss is below -1.5 dB at both frequencies.
Year
DOI
Venue
2013
10.1109/MWSCAS.2013.6674767
Circuits and Systems
Keywords
Field
DocType
cmos integrated circuits,miniaturized dwpd,on-chip dual band wilkinson power divider,lc networks,insertion loss,capacitors,divider could,cmos technology,automotive radar system,k band lumped wilkinson power divider,transmission line,w band lumped wilkinson power divider,frequency bands,chip area,power dividers,on-chip inductors
Current divider,Frequency divider,Capacitor,Transmission line,Computer science,W band,Electronic engineering,CMOS,Insertion loss,Electrical engineering,Wilkinson power divider
Conference
Volume
Issue
ISSN
null
null
1548-3746
Citations 
PageRank 
References 
0
0.34
0
Authors
6
Name
Order
Citations
PageRank
Nan Huang100.34
Yi Xiang2277.12
Chirnchye Boon300.34
Xiaojin Zhao445.48
Junyi Sun500.34
Guangyin Feng655.56