Paper Info
Title
An analytical model for SOI triple RESURF devices
Abstract
An analytical model for the surface potential and electric field distributions of silicon-on-insulator (SOI) triple REduced SURface Field (RESURF) devices has been presented on the basis of the two-dimensional Poisson equation. Meanwhile, the lateral breakdown voltages for N+N and P+N junctions as well as the vertical breakdown voltage are derived. Further, the influence of P-buried layer concentration on the surface electric field and the breakdown voltage is investigated in detail. All analytical results are well verified by simulation results conducted by MEDICI, showing the validity of the presented model.
Year
DOI
Venue
2011
10.1109/ASICON.2011.6157263
ASICON
Keywords
Field
DocType
semiconductor device models,p-n junctions,vertical breakdown voltage,two-dimensional poisson equation,p-buried layer concentration,surface potential,n+n junctions,medici,reduced surface field device,silicon-on-insulator,electric field distributions,soi triple resurf device,p+n junctions,poisson equation,lateral breakdown voltages,electric fields,electric breakdown,breakdown voltage,silicon on insulator,electric field
Silicon on insulator,Electric field,Poisson's equation,Computer science,Electric breakdown,Voltage,Breakdown voltage,Electronic engineering
Conference
Volume
Issue
ISSN
null
null
2162-7541 E-ISBN : 978-1-61284-191-5
ISBN
Citations 
PageRank 
978-1-61284-191-5
0
0.34
References 
Authors
0
3
Name
Order
Citations
PageRank
Hai Huang100.68
Yongwei Wang210714.19
Xingbi Chen302.37