Title
Design of a single-ended cell based 65nm 32x32b 4R2W register file
Abstract
This paper describes a 32x32b 4-read 2-write ported register file in 65nm CMOS. A single-ended read cell using pass gate is proposed, which supports a static read access on the read bit line. This read scheme avoids switching power when successive "0" or "1" emerges on the read bit line. An inverter isolator is added in read port, which improves the read static noise margin (SNM) dramatically. The cell array is divided into 4 banks with each bank 8 words. In this way, the capacities on the read bit line are cut down to 25% of that not banked, which benefits for both read power and latency. To reduce power further, clock gating is used to cut off active power when read or write operation is not necessary. Simulation results show that the read latency is 1.06ns with 12mW total power and 18 uW leakage power at 1.2V. © 2011 IEEE.
Year
DOI
Venue
2011
10.1109/ASICON.2011.6157184
ASICON
Keywords
Field
DocType
null
Clock gating,Inverter,Computer science,Latency (engineering),Register file,CMOS,Electronic engineering,AC power,Decoding methods,Computer hardware,Isolator
Conference
Volume
Issue
ISSN
null
null
2162755X
Citations 
PageRank 
References 
0
0.34
2
Authors
5
Name
Order
Citations
PageRank
Baoyu Xiong131.54
Xingxing Zhang2152.87
Jun Han39124.48
Zhiyi Yu48118.24
Xiaoyang Zeng5442107.26