Name
Title | ||
|---|---|---|
RF performance of InGaAs-based T-gate junctionless field-effect transistors which applicable for high frequency network systems |
Abstract | ||
|---|---|---|
The T-gate InGaAs-based JLFET's which has high frequency RF characteristics have been demonstrated by TCAD tool. To achieve advanced performance of RF characteristics, the T-gate structure is applied, also. By T-gate structure we decrease gate resistance (RG) and achieve a higher maximum oscillation frequency (fmax) compare with planar-type structure. However, the increase of parasitic gate capacitance degrades current gain cut-off frequency (fT) and this trade-off between parasitic components and optimal device structure will be discussed. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/ICOIN.2015.7057959 | ICOIN |
Keywords | Field | DocType |
planar-type structure,indium compounds,tcad tool,jl-finfet,gate resistance,rf characteristic performance,t-gate junctionless field-effect transistor structure,capacitance,gallium arsenide,technology cad (electronics),rf characteristics,radiofrequency integrated circuits,maximum oscillation frequency,oscillations,ingaas,high frequency network systems,field effect transistors,high-frequency network,parasitic gate capacitance component,optimal device structure,current gain cut-off frequency,transistors,cutoff frequency,logic gates,radio frequency | Logic gate,Capacitance,Computer science,Field-effect transistor,Radio frequency,Indium gallium arsenide,Cutoff frequency,Transistor,Optoelectronics,Distributed computing,Indium phosphide | Conference |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jae Hwa Seo | 1 | 0 | 1.35 |
| Young Jun Yoon | 2 | 1 | 1.04 |
| Sung Yoon Kim | 3 | 0 | 0.34 |
| Young Jae Kim | 4 | 28 | 4.62 |
| In Man Kang | 5 | 0 | 2.70 |