Title
Simultaneous transistor pairing and placement for CMOS standard cells
Abstract
This paper presents an integer linear programming approach to transistor placement problem for CMOS standard cells with objectives of minimizing cell width, wiring density, wiring length, diffusion contour roughness, and misalignments of common ploy gates. Our approach considers transistor pairing and transistor placement simultaneously. It can achieve a smaller number of transistor chains than the well-known bipartite approach. About 31% of the 185 cells created by it have smaller widths and no cells whose widths are larger than their handcrafted counterparts.
Year
Venue
Keywords
2015
DATE
standard cell
Field
DocType
ISSN
Multiple-emitter transistor,Computer science,Field-effect transistor,Bipartite graph,CMOS,Pairing,Electronic engineering,Integer programming,Standard cell,Transistor
Conference
1530-1591
Citations 
PageRank 
References 
1
0.47
11
Authors
7
Name
Order
Citations
PageRank
Ang Lu110.81
Hsueh-Ju Lu210.81
En-Jang Jang310.81
Yu-Po Lin410.47
Chun-Hsiang Hung510.47
Chun-Chih Chuang610.47
Rung-Bin Lin710.47