Name
Abstract | ||
|---|---|---|
With their potential for high scalability and density, resistive memories are foreseen as a promising technology that overcomes the physical limitations confronted by charge-based DRAM and flash memory. Yet, a main burden towards the successful adoption and commercialization of resistive memories is their low cell reliability caused by process variation and limited write endurance. Typically, faulty and worn-out cells are permanently stuck at either `0' or `1'. To overcome the challenge, a robust error correction scheme that can recover from many hard faults is required. In this paper, we propose and evaluate RDIS, a novel scheme to efficiently tolerate memory stuck-at faults. RDIS allows for the correct retrieval of data by recursively determining and efficiently keeping track of the positions of the bits that are stuck at a value different from the ones that are written, and then, at read time, by inverting the values read from those positions. RDIS is characterized by a very low probability of failure that increases slowly with the relative increase in the number of faults. Moreover, RDIS tolerates many more faults than the best existing scheme-by up to 95 percent on average at the same overhead level. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/TC.2013.2295825 | Computers, IEEE Transactions |
Keywords | Field | DocType |
fault tolerance,integrated circuit reliability,resistive ram,faulty cells,overhead level,read time,resistive memories,robust error correction scheme,stuck-at fault tolerance,worn-out cells,hard faults,phase change memory,reliability,error correction,radiation detectors,noise measurement,computer architecture | Dram,Phase-change memory,Flash memory,Computer science,Parallel computing,Real-time computing,Error detection and correction,Fault tolerance,Process variation,Scalability,Resistive random-access memory | Journal |
Volume | Issue | ISSN |
64 | 3 | 0018-9340 |
Citations | PageRank | References |
5 | 0.48 | 14 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Rakan Maddah | 1 | 67 | 4.92 |
| Rami Melhem | 2 | 2537 | 164.09 |
| Sangyeun Cho | 3 | 1294 | 73.92 |