Title
An Ultra-Low Phase Noise Class-F 2 CMOS Oscillator With 191 dBc/Hz FoM and Long-Term Reliability
Abstract
In this paper, we propose a new class of operation of an RF oscillator that minimizes its phase noise. The main idea is to enforce a clipped voltage waveform around the LC tank by increasing the second-harmonic of fundamental oscillation voltage through an additional impedance peak, thus giving rise to a class-F 2 operation. As a result, the noise contribution of the tail current transistor on the total phase noise can be significantly decreased without sacrificing the oscillator's voltage and current efficiencies. Furthermore, its special impulse sensitivity function (ISF) reduces the phase sensitivity to thermal circuit noise. The prototype of the class-F 2 oscillator is implemented in standard TSMC 65 nm CMOS occupying 0.2 mm 2 . It draws 32-38 mA from 1.3 V supply. Its tuning range is 19% covering 7.2-8.8 GHz. It exhibits phase noise of -139 dBc/Hz at 3 MHz offset from 8.7 GHz carrier, translated to an average figure-of-merit of 191 dBc/Hz with less than 2 dB variation across the tuning range. The long term reliability is also investigated with estimated >10 year lifetime.
Year
DOI
Venue
2015
10.1109/JSSC.2014.2379265
Solid-State Circuits, IEEE Journal of  
Keywords
Field
DocType
cmos integrated circuits,lc circuits,circuit tuning,harmonic analysis,integrated circuit noise,phase noise,radiofrequency oscillators,sensitivity analysis,thermal noise,fom,isf,lc tank,rf oscillator,tsmc,clipped voltage waveform,complementary metal-oxide semiconductor,current 32 ma to 38 ma,figure-of-merit,frequency 7.2 ghz to 8.8 ghz,fundamental oscillation voltage,impedance peak,impulse sensitivity function,long-term reliability,phase noise minimization,phase sensitivity,radiofrequency oscillator,second-harmonic oscillation,size 65 nm,tail current transistor,thermal circuit noise,tuning range,ultralow phase noise class-f2 cmos oscillator,voltage 1.3 v,class-f$_{2}$ oscillator,vco,differential/common mode resonant frequencies,digitally controlled oscillator,oscillator reliability,transformer,resonant frequency,oscillator,impedance,tuning,complementary metal oxide semiconductor,figure of merit
Phase-locked loop,Variable-frequency oscillator,Control theory,Oscillator phase noise,Computer science,Phase noise,Electronic engineering,Noise temperature,Voltage-controlled oscillator,Noise spectral density,dBc
Journal
Volume
Issue
ISSN
50
3
0018-9200
Citations 
PageRank 
References 
19
0.84
15
Authors
2
Name
Order
Citations
PageRank
Masoud Babaie119525.05
Robert Bogdan Staszewski243872.62