Paper Info
Title
A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor.
Abstract
A low power 8T global shutter pixel with extended FD voltage swing range is proposed for large format high speed CMOS image sensor. The pixel has a negative threshold reset transistor, two in-pixel source followers, and a sample-and-hold circuit. The in-pixel first source follower is employed for reducing the pixel average current and maximum transient current. The negative threshold reset transistor is applied to extend the voltage swing of FD. Using pixel level sample-and-hold circuit, the kTC noise on FD node can be effectively nullified by correlated double sampling operation. A high speed 1000 fps 256 × 256 CMOS image sensor is implemented in 0.18 μm CMOS process. Two 10-bit cyclic ADC arrays are integrated in this prototype sensor chip. The active area of the chip is 10 mm × 7 mm with a pixel size of 14 μm × 14 μm. The developed sensor achieves an average current of 23 nA per pixel, a maximum transit current per pixel as low as 1113 nA, and a large FD voltage swing of 1.78 V. The sensor temporal noise level is 103 e- and full well capacity has 27000 e-which results in 48.3 dB signal dynamic range
Year
DOI
Venue
2015
10.1007/s11432-014-5272-8
SCIENCE CHINA Information Sciences
Keywords
Field
DocType
global shutter, CDS, low power, negative threshold reset transistor, high speed image sensor, 042406
Correlated double sampling,Dynamic range,Image sensor,Control theory,Shutter,Chip,Pixel,Large format,Transistor,Computer hardware,Electrical engineering,Mathematics
Journal
Volume
Issue
ISSN
58
4
1869-1919
Citations 
PageRank 
References 
4
1.13
4
Authors
9
Name
Order
Citations
PageRank
Yangfan Zhou123229.72
Zhongxiang Cao2354.48
Ye Han3252.69
Quanliang Li4122.39
Cong Shi548940.60
Runjiang Dou642.48
Qi Qin7233.62
Jian Liu872.54
Nanjian Wu917624.14