Name
Title | ||
|---|---|---|
A 1.35-V 16-Mb Twin-Bit-Cell Virtual-Ground-Architecture Embedded Flash Memory With a Sensing Current Protection Technique |
Abstract | ||
|---|---|---|
In this paper, a 1.35 V 16 Mb twin-bit-cell virtual ground architecture embedded Flash memory is presented. To reduce the sensing margin loss caused by the side-leakage current in the virtual ground architecture memory array, a sensing current protection technique has been proposed. A reference voltage generating circuit for dynamic sensing window tracking is designed to maximize the sensing window under various PVT (Process-Voltage-Temperature) conditions. With the reference voltage generating circuit and a high performance sense amplifier, high speed read operation is achieved. As four bitlines have to be selected to read one bit, an S-D-P-P (Source-Drain-Protection-Protection) style column decoding methodology has been introduced to support the sensing current protection technique. The embedded Flash IP has been fabricated in a GSMC 90 nm 4 poly 4 metal CMOS process. The die size of the proposed Flash IP is 3.2 mm2 and the memory cell size is 0.16 μm2. Access time of 36 ns at 1.35 V has been achieved. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/TCSI.2014.2321207 | IEEE Trans. on Circuits and Systems |
Keywords | Field | DocType |
cmos process,twin-bit-cell virtual-ground-architecture embedded flash memory,cmos integrated circuits,side-leakage current,gsmc,virtual ground architecture,leakage currents,virtual ground architecture memory array,embedded flash ip,voltage -1.35 v,embedded flash memory,sensing current protection technique,source-drain-protection-protection style column decoding methodology,logic design,reference voltage generating circuit,twin-bit-cell,size 90 nm,dynamic sensing window tracking,sense amplifier,sensing technique,column decoding,high performance sense amplifier,flash memories | Sense amplifier,Virtual ground,Flash memory,Access time,Voltage reference,Electronic engineering,Decoding methods,Mathematics,Bit cell,Memory cell | Journal |
Volume | Issue | ISSN |
61 | 10 | 1549-8328 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shengbo Zhang | 1 | 1 | 1.41 |
| Jun Xiao | 2 | 7 | 3.33 |
| Guangjun Yang | 3 | 3 | 2.88 |
| Jian Hu | 4 | 10 | 7.03 |
| Mingyong Huang | 5 | 0 | 0.68 |
| Shichang Zou | 6 | 20 | 12.47 |