Name
Title | ||
|---|---|---|
Improved device variability in scaled MOSFETs with deeply retrograde channel profile. |
Abstract | ||
|---|---|---|
•The VTH variability from RDF is investigated for LG=45nm deeply retrograde MOSFET.•The deeply retrograde MOSFET delivers 42% lower σ-VTH than planar bulk MOSFET.•The thinner the low surface doping layer, the higher the σ-VTH.•Lower σ-VTH is due to the lower surface E-field dependence on doping variation.•Deeply retrograde MOSFET also has lower VTH dependence on LG fluctuation. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1016/j.microrel.2013.11.003 | Microelectronics Reliability |
Field | DocType | Volume |
Reverse short-channel effect,Doping,Communication channel,CMOS,Electronic engineering,Planar,Engineering,Transistor,Threshold voltage,Scaling | Journal | 54 |
Issue | ISSN | Citations |
6 | 0026-2714 | 1 |
PageRank | References | Authors |
0.43 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jason Woo | 1 | 1 | 0.43 |
| P. Y. Chien | 2 | 1 | 0.43 |
| Frank Yang | 3 | 13 | 2.52 |
| S. C. Song | 4 | 5 | 1.79 |
| Chidi Chidambaram | 5 | 1 | 0.76 |
| Joseph Wang | 6 | 9 | 2.10 |
| G. Yeap | 7 | 14 | 4.92 |