Title
The transient analysis of latch-up in CMOS transmission gate induced by laser.
Abstract
•Transient excitation at photocurrent from an unlatched to latched state is studied.•The analytical expressions of pulse width and PRF effects in lath-up are obtained.•The model in this paper can be widely used in different latch-up situations.
Year
DOI
Venue
2014
10.1016/j.microrel.2014.08.014
Microelectronics Reliability
Keywords
Field
DocType
CMOS transmission gate,Laser,Latch-up,Transient analysis
Photocurrent,CMOS,Laser,Electronic engineering,Pulse (signal processing),Transmission gate,Engineering,Transient analysis,Silicon-controlled rectifier
Journal
Volume
Issue
ISSN
54
12
0026-2714
Citations 
PageRank 
References 
0
0.34
7
Authors
5
Name
Order
Citations
PageRank
Weicheng Qiu101.01
Xiang-Ai Cheng200.34
Rui Wang300.34
Zhongjie Xu400.34
Chao Shen500.34