Paper Info
Title
A study of deposition conditions on charging properties of PECVD silicon nitride films for MEMS capacitive switches.
Abstract
The present paper aims to provide a better insight to the electrical characteristics of silicon nitride films that have been deposited with PECVD method under different conditions. The effect of film thickness, substrate temperature and the frequency that produces the plasma in PECVD method on the dielectric charging phenomenon in silicon nitride films has been investigated with the aid of thermally stimulated depolarization currents (TSDC) and Kelvin Probe (KP) techniques. The results indicate that the decrease of film thickness and substrate temperature as well as the deposition at high frequency plasma (13.56 MHz) seems to produce silicon nitride films that are less prone to dielectric charging and thus better candidates for MEMS capacitive switches. (C) 2014 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2014
10.1016/j.microrel.2014.08.002
MICROELECTRONICS RELIABILITY
Keywords
DocType
Volume
RF MEMS capacitive switch,Dielectric charging,Silicon nitride,PECVD method
Journal
54
Issue
ISSN
Citations 
SP9-10
0026-2714
2
PageRank 
References 
Authors
0.53
2
4
Name
Order
Citations
PageRank
M. Koutsoureli1217.67
L. Michalas2145.70
Anestis Gantis320.53
George J. Papaioannou432.27