Name
Title | ||
|---|---|---|
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. |
Abstract | ||
|---|---|---|
•We estimate the surface state density by two independent techniques, CV and EL.•Investigation of electrical field distribution dependent on surface state density.•Increased surface state density decreases voltage robustness of HFETs.•Premature failure due to dielectric breakdown under the gate field plate. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1016/j.microrel.2014.09.016 | Microelectronics Reliability |
Keywords | Field | DocType |
GaN Reliability,Surface charge,Electroluminescence,HTRB,Capacitance–voltage profiling | Electric field,Leakage (electronics),Power semiconductor device,Dielectric,Diode,Voltage,Capacitance–voltage profiling,Electronic engineering,Engineering,High voltage,Optoelectronics | Journal |
Volume | Issue | ISSN |
54 | 12 | 0026-2714 |
Citations | PageRank | References |
1 | 0.48 | 1 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Matthias Wespel | 1 | 2 | 0.99 |
| M. Baeumler | 2 | 2 | 1.67 |
| Vladimir Polyakov | 3 | 1 | 0.82 |
| M. Dammann | 4 | 2 | 0.99 |
| Richard Reiner | 5 | 1 | 1.16 |
| Patrick Waltereit | 6 | 1 | 0.82 |
| Rüdiger Quay | 7 | 4 | 1.95 |
| Michael Mikulla | 8 | 4 | 1.61 |
| Oliver Ambacher | 9 | 9 | 4.04 |