Paper Info
Title
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.
Abstract
Dynamic characterization (Pulsed I-V) on Au-free AlGaN/GaN Schottky Barrier Diodes (SBDs) has been performed to evaluate the impact of negative quiescent biases on the forward characteristics. Results show an increase of on-resistance when more negative quiescent biases are applied, and a sudden current collapse phenomenon when the quiescent bias exceeds -175 V. Furthermore, the measurements show a common signature: the total current collapse is the result of the trapping phenomena occurring around the Schottky contact corner. The trap levels of 0.5 eV and 1.0 eV have been characterized from current transient spectroscopy. A TCAD model with these two trap levels as donor states at the Si3N4/AlGaN interface has been defined, to understand their role and explain the observed behavior of AlGaN/GaN SBDs from this dynamic measurement. We propose that trapping at deep energy levels (Trap1 = 1.0 eV), existing at the Si3N4/AlGaN interface, is responsible for the gradual current reduction observed for negative quiescent biases up to Anode-to-Cathode voltage (V-AC) of -175 V. The electron filling at the shallower traps with high density at energy level located 0.5 eV starts at higher reverse biases, resulting in a strong Fermi-level pinning, which can be the cause of sudden current collapse. (C) 2014 Published by Elsevier Ltd.
Year
DOI
Venue
2014
10.1016/j.microrel.2014.07.031
MICROELECTRONICS RELIABILITY
Keywords
DocType
Volume
GaN,Schottky Barrier Diode (SBD),Pulsed I-V,Current collapse,TCAD simulation,Trapping/de-trapping
Journal
54
Issue
ISSN
Citations 
SP9-10
0026-2714
0
PageRank 
References 
Authors
0.34
0
9
Name
Order
Citations
PageRank
Jie Hu100.34
Steve Stoffels265.01
Silvia Lenci300.34
N. Ronchi430.82
Rafael Venegas500.68
Shuzhen You600.68
Benoit Bakeroot751.10
G. Groeseneken810825.08
Stefaan Decoutere99751.66