Name
Title | ||
|---|---|---|
Off-state breakdown and leakage current transport analysis of AlGaN/GaN high electron mobility transistors. |
Abstract | ||
|---|---|---|
•Breakdown properties of GaN HEMTs are studied by drain current injection method.•Buffer-leakage induced breakdown is revealed at high drain current injection level.•The buffer-leakage induced breakdown should be defect-related in present devices. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1016/j.microrel.2014.06.005 | Microelectronics Reliability |
Keywords | Field | DocType |
AlGaN/GaN,HEMTs,Off-state breakdown,Drain current injection technique | Leakage (electronics),Voltage,Negative temperature,Electronic engineering,Breakdown voltage,Time-dependent gate oxide breakdown,Engineering,Transistor,Avalanche diode,Electron mobility | Journal |
Volume | Issue | ISSN |
54 | 11 | 0026-2714 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Weizong Xu | 1 | 0 | 0.34 |
| Lihua Fu | 2 | 0 | 0.34 |
| Hai Lu | 3 | 0 | 1.01 |
| Dunjun Chen | 4 | 0 | 0.68 |
| Fangfang Ren | 5 | 0 | 0.34 |
| Rong Zhang | 6 | 94 | 22.74 |
| Youdou Zheng | 7 | 0 | 0.68 |
| Ke Wei | 8 | 0 | 0.68 |
| Xinyu Liu | 9 | 25 | 14.99 |