Name
Title | ||
|---|---|---|
A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate. |
Abstract | ||
|---|---|---|
•New P-SOI LDMOS structure with n-type floating buried layer in the substrate.•The proposed structure improves the BV and reduces specific on-resistance.•Self-heating effects are also suppressed in the proposed structure. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1016/j.microrel.2013.10.021 | Microelectronics Reliability |
Field | DocType | Volume |
Silicon on insulator,Electric field,LDMOS,Field-effect transistor,Electronic engineering,Breakdown voltage,Engineering,Thermal conduction,High voltage,Silicon | Journal | 54 |
Issue | ISSN | Citations |
3 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 1 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chao Xia | 1 | 0 | 0.34 |
| Xinhong Cheng | 2 | 0 | 2.37 |
| Zhongjian Wang | 3 | 3 | 2.43 |
| Duo Cao | 4 | 0 | 0.34 |
| Tingting Jia | 5 | 3 | 1.11 |
| Li Zheng | 6 | 0 | 0.34 |
| Yuehui Yu | 7 | 1 | 1.33 |
| Dashen Shen | 8 | 0 | 0.34 |