Title
An original DoE-based tool for silicon photodetectors EoL estimation in space environments.
Abstract
Incur previous works we have demonstrated that Design of Experiments (DoE) is an innovative methodology defining optimized irradiation test plan and particularly valuable for the space qualification of silicon photodetectors. In particular, it provided us with the degradation model of photocurrent, darkness current, and spectral responsivity of silicon based phototransistors arrays with respect to the Total Ionizing Dose (TID) and to the Displacement Damage Dose (DDD), over a wide range of space-mission profiles. In this paper, we will summarize at first main results obtained thanks to the DoE methodology. Then we present how we can easily obtain, by exploiting DoE collected data, End-of-Life predictions of such devices with a reduced number of experiments, with a small batch of devices, and in relatively short time. (C) 2011 Elsevier Ltd. All rights reserved.
Year
DOI
Venue
2011
10.1016/j.microrel.2011.07.036
MICROELECTRONICS RELIABILITY
Keywords
Field
DocType
total ionizing dose,space missions,dark current,design of experiment
Photocurrent,Absorbed dose,Test plan,Responsivity,Photodetector,Electronic engineering,Engineering,Silicon,Design of experiments
Journal
Volume
Issue
ISSN
51
SP9-11
0026-2714
Citations 
PageRank 
References 
0
0.34
0
Authors
6
Name
Order
Citations
PageRank
Piero Spezzigu100.34
Laurent Béchou200.34
Gianandrea Quadri300.34
Olivier Gilard422.68
Yves Ousten562.59
Massimo Vanzi63512.63