Name
Abstract | ||
|---|---|---|
This letter presents a 529 GHz 2:1 dynamic frequency divider in a 130 nm InP HBT process, which, to the best of authors' knowledge, is the fastest frequency divider reported thus far. The presented divider is based on a novel structure to overcome bandwidth limitations of traditional dynamic frequency divider design. On-wafer measurement shows that the divider operates with the input frequency from 528.0 GHz to 529.2 GHz with bias voltage tuning, while consuming P-DC <= 196 mW. A driver amplifier, integrated for testing purpose, dissipates 348 mW of dc power. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1587/elex.12.20141118 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
dynamic frequency divider, regenerative frequency divider, InP heterojunction bipolar transistors, terahertz | Frequency divider,Computer science,Optics,Terahertz radiation,Heterojunction bipolar transistor | Journal |
Volume | Issue | ISSN |
12 | 3 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Munkyo Seo | 1 | 73 | 9.85 |
| John Hacker | 2 | 0 | 0.34 |
| M. Urteaga | 3 | 16 | 7.43 |
| Anders Skalare | 4 | 9 | 2.13 |
| Mark J. W. Rodwell | 5 | 223 | 29.72 |