Title
A Silicon-Based 0.3 THz Frequency Synthesizer With Wide Locking Range
Abstract
A 300 GHz frequency synthesizer incorporating a triple-push VCO with Colpitts-based active varactor (CAV) and a divider with three-phase injection is introduced. The CAV provides frequency tunability, enhances harmonic power, and buffers/injects the VCO fundamental signal from/to the divider. The locking range of the divider is vastly improved due to the fact that the three-phase injection introduces larger allowable phase change and injection power into the divider loop. Implemented in 90 nm SiGe BiCMOS, the synthesizer achieves a phase-noise of -77.8 dBc/Hz (-82.5 dBc/Hz) at 100 kHz (1 MHz) offset with a crystal reference, and an overall locking range of 280.32-303.36 GHz (7.9%).
Year
DOI
Venue
2014
10.1109/JSSC.2014.2360385
J. Solid-State Circuits
Keywords
DocType
Volume
varactors,SiGe,voltage-controlled oscillators,phase-locked loop (PLL),Active varactor,frequency tunability,BiCMOS analogue integrated circuits,multi-phase injection,injection-locked divider,harmonic power,divider loop,frequency synthesizer,frequency 0.3 THz,Colpitts,silicon-based frequency synthesizer,injection power,BiCMOS,phase-noise,frequency generation,three-phase injection,silicon,ring oscillator,triple-push VCO,frequency synthesizers,frequency dividers,size 90 nm,millimetre wave frequency convertors,phase noise,phase change,elemental semiconductors,wide locking range,terahertz,Colpitts-based active varactor,crystal reference
Journal
49
Issue
ISSN
Citations 
12
0018-9200
12
PageRank 
References 
Authors
1.02
12
4
Name
Order
Citations
PageRank
Pei-Yuan Chiang1514.26
Zheng Wang2463.76
Omeed Momeni3373.91
Payam Heydari464975.49