Paper Info
Title
Fabrication of silicon-based MEMS capacitive microphone structure with thin starting wafer
Abstract
In this work, silicon-based MEMs capacitive microphone was designed and fabricated on 150 mm CMOS Line. 400 um thin wafer was used as starting wafer, which can greatly reduce process integration complexity accompany with the reduced cost. Low-stress poly film was used as back-plate and membrane. CMOS BEOL Al film was used as PAD for the back-plate and membrane. To make better control of wafer bowing induced by thinner wafer and in-film stress, optimized integration scheme and module process were developed. CV test was done to check the wafer-level microphone performance. From the CV data, C0 (initial capacitance at 0 V) is about 4.8 pF, and pull-in voltage is about 13.5 V. A fast wafer-level reliability test was done to check the structure/process performance. From the data comparison between initial values and values after cycles of stressed pulse, the process can meet the device requirements.
Year
DOI
Venue
2013
10.1109/ASICON.2013.6811942
ASICON
Keywords
Field
DocType
low-stress poly film,mems capacitive microphone structure,capacitive microphone,capacitive sensors,microphones,mems,microsensors,membrane,wafer-level reliability test,size 400 mum,silicon,wafer bowing,microfabrication,si,size 150 mm,elemental semiconductors,thinner wafer,in-film stress,al,cmos
Wafer,Capacitance,Microelectromechanical systems,Computer science,Process integration,CMOS,Electronic engineering,Wafer testing,Fabrication,Microphone
Conference
ISSN
ISBN
Citations 
2162-7541
978-1-4673-6415-7
0
PageRank 
References 
Authors
0.34
0
9
Name
Order
Citations
PageRank
Xiaoxu Kang1235.52
Chao Yuan242.43
Qingyun Zuo342.43
Changwa Yao400.34
Shoumian Chen501.69
Yuhang Zhao631.13
Yilin Yan700.34
Yuanjun Xu800.34
Weiping Zhou900.34