Title | ||
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Compact modeling of the diode reverse recovery effect for leading developments of power electronic applications |
Abstract | ||
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SPICE modeling of the diode reverse recovery effect is discussed. This effect is very important for the developments of power electronic circuit applications such as motor-drive inverters and power conditioners. With the dynamic carrier-distribution-based modeling approach, the reverse recovery behaviors are explained, where the nonquasi-static (NQS) behavior of carriers in the drift region is considered. Its reverse recovery modeling ability is verified with a two-dimensional (2D) device simulator, in comparison to the conventional lumped-charge modeling technique. |
Year | DOI | Venue |
---|---|---|
2013 | 10.1109/ASICON.2013.6811933 | ASICON |
Keywords | Field | DocType |
semiconductor device models,spice,motor-drive inverters,power diodes,nonquasi-static behavior,diode reverse recovery effect,dynamic carrier-distribution-based modeling approach,power semiconductor diodes,2d device simulator,lumped-charge modeling technique,spice modeling,two-dimensional device simulator,power conditioners,compact modeling,nqs behavior,drift region,power electronic circuit | Computer science,Spice,Diode,Reverse recovery,Power electronic circuit,Electronic engineering,NQS,Electrical engineering | Conference |
ISSN | ISBN | Citations |
2162-7541 | 978-1-4673-6415-7 | 0 |
PageRank | References | Authors |
0.34 | 1 | 3 |
Name | Order | Citations | PageRank |
---|---|---|---|
Masataka Miyake | 1 | 3 | 3.07 |
Kai Matsuura | 2 | 0 | 0.34 |
Akifumi Ueno | 3 | 0 | 0.34 |