Title
Compact modeling of the diode reverse recovery effect for leading developments of power electronic applications
Abstract
SPICE modeling of the diode reverse recovery effect is discussed. This effect is very important for the developments of power electronic circuit applications such as motor-drive inverters and power conditioners. With the dynamic carrier-distribution-based modeling approach, the reverse recovery behaviors are explained, where the nonquasi-static (NQS) behavior of carriers in the drift region is considered. Its reverse recovery modeling ability is verified with a two-dimensional (2D) device simulator, in comparison to the conventional lumped-charge modeling technique.
Year
DOI
Venue
2013
10.1109/ASICON.2013.6811933
ASICON
Keywords
Field
DocType
semiconductor device models,spice,motor-drive inverters,power diodes,nonquasi-static behavior,diode reverse recovery effect,dynamic carrier-distribution-based modeling approach,power semiconductor diodes,2d device simulator,lumped-charge modeling technique,spice modeling,two-dimensional device simulator,power conditioners,compact modeling,nqs behavior,drift region,power electronic circuit
Computer science,Spice,Diode,Reverse recovery,Power electronic circuit,Electronic engineering,NQS,Electrical engineering
Conference
ISSN
ISBN
Citations 
2162-7541
978-1-4673-6415-7
0
PageRank 
References 
Authors
0.34
1
3
Name
Order
Citations
PageRank
Masataka Miyake133.07
Kai Matsuura200.34
Akifumi Ueno300.34