Paper Info
Title
A 29.5 dBm class-E outphasing RF power amplifier with performance enhancement circuits in 45nm CMOS
Abstract
A high efficiency class-E outphasing RF power amplifier is presented using a new passive combining circuit. A Power Enhancement Circuit (PEC) and an Efficiency Enhancement Circuit (EEC) are also proposed as part of the combiner that increase output power without violating reliability limits and improve efficiency at power back-off, respectively. The proposed power amplifier is designed in 45nm CMOS technology. Simulation results and measurement data are presented to demonstrate the performance of the proposed PA. The PA delivers 29.5 dBm peak output power at 2.4GHz with 46.76% drain efficiency at peak output power, 32.96% drain efficiency at 3 dB power back-off and 21.16% drain efficiency at 6 dB power back-off. Better than -50 dBc ACPR is obtained with 64-QAM LTE signal with 10MHz and 20MHz bandwidth. 21% average efficiency is obtained with LTE signal with 6 dB peak-to-average power ratio (PAPR).
Year
DOI
Venue
2014
10.1109/ESSCIRC.2014.6942123
European Solid State Circuits Conference
Keywords
DocType
ISSN
CMOS analogue integrated circuits,Long Term Evolution,UHF integrated circuits,UHF power amplifiers,passive networks,quadrature amplitude modulation,64-QAM LTE signal,CMOS technology,EEC,PA,PAPR,PEC,bandwidth 10 MHz,bandwidth 20 MHz,class-E outphasing RF power amplifier,efficiency 21 percent,efficiency 21.16 percent,efficiency 32.96 percent,efficiency 46.76 percent,efficiency enhancement circuit,frequency 2.4 GHz,passive combining circuit,peak-to-average power ratio,performance enhancement circuits,power back-off,size 45 nm,RF,class-E,outphasing,power amplifier
Conference
1930-8833
Citations 
PageRank 
References 
0
0.34
0
Authors
5
Name
Order
Citations
PageRank
Aritra Banerjee100.68
Rahmi Hezar2173.80
Lei Ding300.68
Nathan Schemm4669.82
Baher Haroun5349.20