Title
Nonlinear response of the semiconductor pre-amplifier in next generation 400 Gb/s ethernet 40-km transceivers
Abstract
The nonlinear response of a bulk semiconductor optical pre-amplifier in a 16 × 25 Gb/s WDM implementation for the next 40-km Ethernet link, operating at 400 Gbps is numerically analysed. It is found that the effect of carrier-heating-induced four-wave mixing for channel spacing values between 200 and 800 GHz is rather modest despite the large number of optical channels. In contrast, cross-gain modulation is uncovered as the main impairment, and its dependence on the system channel-spacing value is quantified and explained in terms of the interplay between amplifier saturation and fibre dispersion. Useful design parameters for the optoelectronic transceivers, operating at 25.781 Gb/s in traditional on-off keying scheme, are put forward.
Year
DOI
Venue
2014
10.1109/CSNDSP.2014.6923994
Communication Systems, Networks & Digital Signal Processing
Keywords
Field
DocType
optical dispersion,optical fibre LAN,optical modulation,optical transceivers,preamplifiers,wavelength division multiplexing,WDM implementation,amplifier saturation,bit rate 25 Gbit/s,bit rate 25.781 Gbit/s,bit rate 400 Gbit/s,bulk semiconductor optical preamplifier,carrier-heating-induced four-wave mixing,cross-gain modulation,fibre dispersion,next generation Ethernet transceivers,nonlinear response,on-off keying scheme,optical channels,optoelectronic transceivers,system channel-spacing value,wavelength division multiplexing,Ethernet,Nonlinear effects,semiconductor optical amplifier,transmission system simulation,wavelength division multiplexing
Optical amplifier,Channel spacing,Telecommunications,Transceiver,Computer science,Passive optical network,Real-time computing,Electronic engineering,Optical performance monitoring,Multi-mode optical fiber,Optical modulation amplitude,Amplifier
Conference
Citations 
PageRank 
References 
0
0.34
0
Authors
4