Name
Title | ||
|---|---|---|
Experimental and simulation results on Si integrated inductor efficiency for smart RF-ICs |
Abstract | ||
|---|---|---|
This paper presents several experimental and simulation results on silicon integrated inductors. Measurements and 3D electromagnetic simulations highlight the efficiency of different layout techniques and technological choices to improve integrated inductor Q factor. Different kinds of pattern ground shields and different substrate configurations are measured and studied. Electromagnetic phenomena involved in such passive integrated devices are described thanks to the complementary measurement/simulation approach. Pattern ground shields have to be carefully used: this layout solution can degrade the integrated inductor quality depending on substrate characteristics of the integration technology. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/ICECS.2014.7049998 | Electronics, Circuits and Systems |
Keywords | Field | DocType |
Q-factor,electromagnetic shielding,inductors,integrated circuit layout,radiofrequency integrated circuits,3D electromagnetic simulations,Si,integrated inductor Q-factor,integrated inductor efficiency,layout technique,pattern ground shields,silicon integrated inductor,smart RF-IC,RF integrated inductors,pattern ground shield (PGS),quality factor,substrate losses | Computer science,Electromagnetic Phenomena,Inductor,Substrate coupling,Electronic engineering,Integrated devices,Shields,Electrical engineering,Silicon | Conference |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. S. Royet | 1 | 0 | 0.34 |
| J. C. Barbe | 2 | 0 | 0.34 |
| Olivier Valorge | 3 | 0 | 0.34 |
| Remy, L. | 4 | 0 | 0.34 |
| I. Constant | 5 | 0 | 0.34 |