Title
Soft-Delay-Error Evaluation in Content-Addressable Memory
Abstract
In this paper, a delay-variation effect under alpha-particle strikes is evaluated in content-addressable memories (CAMs). The particle strikes into transistors induce a current-pulse signal that causes the delay variation, resulting in a timing error, called a soft-delay error (SDE). The delay variations in two different CAMs designed in a 90nm CMOS technology are simulated in NS-SPICE using a charge-injection model that generates a current-pulse signal. The SDE effects are discussed, where one of the CAMs is a traditional 9-transistor-cell CAM and the other one is a magnetic-tunnel-junction (MTJ)/MOS hybrid CAM that operates based on a multiple-valued current-mode logic. The simulation results show that there is a trade-off between the amount of current (thus power dissipation) and the SDE effects in the MTJ/MOS hybrid CAM.
Year
DOI
Venue
2014
10.1109/ISMVL.2014.46
Multiple-Valued Logic
Keywords
Field
DocType
CMOS integrated circuits,SPICE,content-addressable storage,multivalued logic,9-transistor-cell CAM,90nm CMOS technology,NS-SPICE,SDE,alpha-particle strikes,charge-injection model,content-addressable memory,current-pulse signal generation,delay-variation effect,magnetic-tunnel-junction-MOS hybrid CAM,multiple-valued current-mode logic,power dissipation,soft-delay-error evaluation,timing error,CAM,associative memory,magnetic-tunnel-junction (MTJ) device,nonvolatile memory,single-event upset (SEU),soft error
Computer-aided manufacturing,Content-addressable memory,Soft error,Dissipation,Computer science,CMOS,Electronic engineering,Non-volatile memory,Transistor,MOSFET
Conference
ISSN
Citations 
PageRank 
0195-623X
0
0.34
References 
Authors
12
4
Name
Order
Citations
PageRank
Onizawa, N.110.72
Matsunaga, S.247749.70
Sakimura, N.360.82
Nebashi, R.4192.15