Name
Abstract | ||
|---|---|---|
Gallium nitride high-electron mobility transistors (GaN HEMTs) have attractive properties, low on-resistances and fast switching speeds. This paper presents the characteristics of a normally-on GaN HEMT that we fabricated. Further, the circuit operation of a Class-E amplifier is analyzed. Experimental results demonstrate the excellent performance of the gate drive circuit for the normally-on GaN HEMT and the 13.56MHz radio frequency (RF) power amplifier. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/IECON.2014.7048621 | IECON |
Keywords | Field | DocType |
iii-v semiconductors,driver circuits,gallium compounds,high electron mobility transistors,radiofrequency power amplifiers,gan,rf power amplifier,class-e amplifier,frequency 13.56 mhz,gallium nitride high-electron mobility transistors,gate drive circuit,normally-on gan hemt,radio frequency power amplifier,13.56-mhz rf amplifier,gan hemt,class-e amplifie,normally-on device,inductors,capacitors,logic gates | Gallium nitride,Logic gate,Inductor,Radio frequency,Engineering,Transistor,High-electron-mobility transistor,RF power amplifier,Optoelectronics,Amplifier | Conference |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| masayuki okamoto | 1 | 1 | 1.08 |
| toshihiko tanaka | 2 | 0 | 0.68 |
| koyo matuzaki | 3 | 0 | 0.34 |
| tamotsu hashizume | 4 | 0 | 0.34 |
| h yamada | 5 | 0 | 1.01 |