Name
Abstract | ||
|---|---|---|
This work presents a self-biased MOSFET threshold voltage VT0 extractor circuit. Its working principle is based on a current-voltage relationship derived from a continuous physical model. The model is valid for any operating condition, from weak to strong inversion, and under triode or saturation regimes. The circuit is MOSFET-only (can be implemented in any standard digital process), and it operates with a power supply of less than 1 V, consuming tenths of nW. Post-layout simulation results show that the extracted VT0 has an error inferior to 1.3%, when compared to the theoretical value, for a -40 to 125°C temperature range. We present variability results from Monte Carlo simulations that support the extracting behavior of the circuit with good accuracy. The occupied silicon area is 0.0076 mm2 in a 0.13μm CMOS process. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1145/2660540.2660991 | Integrated Circuits and Systems Design |
Keywords | Field | DocType |
CMOS integrated circuits,MOSFET,Monte Carlo methods,integrated circuit layout,triodes,CMOS process,Monte Carlo simulations,continuous physical model,current-voltage relationship,nanowatt MOSFET,post-layout simulation,saturation regimes,self-biased MOSFET,size 0.13 mum,standard digital process,temperature -40 degC to 125 degC,threshold voltage extractor circuit,triode,voltage 1 V,CMOS Analog Design,Nano-Power,Threshold Voltage Extractor | Monte Carlo method,Saturation (chemistry),Atmospheric temperature range,Computer science,Triode,Electronic engineering,MOSFET,Electrical engineering,Nano-,Threshold voltage,Silicon | Conference |
Citations | PageRank | References |
3 | 0.45 | 5 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Oscar E. Mattia | 1 | 8 | 1.68 |
| hamilton klimach | 2 | 71 | 20.07 |
| sergio bampi | 3 | 496 | 102.12 |