Name
Abstract | ||
|---|---|---|
In this paper we show that silicon split-contact magnetoresistors with geometric dimensions of the order of the Debye length (LD) can have much higher sensitivities than the usual devices with much larger length and width than LD. Numerical simulations carried out with Comsol Multiphysics show that silicon n-type magnetoresistors with dimensions of the order of LD can have magnetic sensitivity as high as 60%/T which is ten times higher than usual sensitivities. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/LASCAS.2014.6820254 | LASCAS |
Keywords | Field | DocType |
elemental semiconductors,magnetoresistive devices,resistors,semiconductor device models,silicon,comsol multiphysics,debye length,si,geometric dimensions,high-sensitivity split-contact magnetoresistors,lightly doped silicon substrates,magnetic sensitivity,n-type magnetoresistors,current density,mathematical model,numerical simulation,sensitivity | Current density,Computer simulation,Multiphysics,Computer science,Doping,Debye length,Electronic engineering,Silicon | Conference |
ISSN | Citations | PageRank |
2330-9954 | 0 | 0.34 |
References | Authors | |
1 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Santillan-Quinonez, G.F. | 1 | 0 | 0.34 |
| Galup-Montoro, C. | 2 | 105 | 23.86 |
| Gerard F. Santillan-Quinonez | 3 | 0 | 0.34 |
| Carlos Galup-Montoro | 4 | 2 | 1.39 |