Name
Abstract | ||
|---|---|---|
We report 50 GSamples/s track-hold amplifier (THA) and sample-hold amplifier (SHA) designed and fabricated in a 250 nm InP double heterojunction bipolar transistor (DHBT) technology. Because the base-emitter junction reverse breakdown voltage is low in the process technology employed, the circuits use a base-collector junction diode as the switching element in the signal path. Operating with -5 V and -2.5 V supplies, the THA achieves > +16 dBm input-referred third-order intercept (IIP3) at signal frequencies below 22 GHz, while the SHA achieves IIP3 > +17 dBm for 2-22 GHz inputs. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/JSSC.2014.2329843 | Solid-State Circuits, IEEE Journal of |
Keywords | DocType | Volume |
III-V semiconductors,heterojunction bipolar transistors,indium compounds,microwave amplifiers,sample and hold circuits,DHBT,InP,SHA,THA,base-collector junction diode,base-emitter junction reverse breakdown voltage,double heterojunction bipolar transistor,frequency 2 GHz to 22 GHz,sample-hold amplifiers,size 250 nm,third-order intercept,track-hold amplifiers,voltage -2.5 V,voltage -5 V,Analog-to-digital converter (ADC),InP technology,nonlinearity analysis,sample-hold amplifier (SHA),track-hold amplifier (THA) | Journal | 49 |
Issue | ISSN | Citations |
10 | 0018-9200 | 5 |
PageRank | References | Authors |
0.58 | 3 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Saeid Daneshgar | 1 | 44 | 4.16 |
| Zach Griffith | 2 | 23 | 5.45 |
| Munkyo Seo | 3 | 73 | 9.85 |
| Mark J. W. Rodwell | 4 | 9 | 1.93 |