Name
Abstract | ||
|---|---|---|
This paper presents a Ternary Content Addressable Memory (TCAM) cell that employs memristors as storage element. The TCAM cell requires two memristors in series to perform the traditional memory operations (read and write) as well as the search and matching operations for TCAM; this memory cell is analyzed with respect to different features (such as memristance range and voltage threshold) of the memristors to process fast and efficiently the ternary data. A comprehensive simulation based assessment of this cell is pursued by HSPICE. Comparison with other memristor-based CAMs as well as CMOS-based TCAMs shows that the proposed cell offers significant advantages in terms of power dissipation, reduced transistor count and search/match operation performance. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/NANOARCH.2014.6880478 | Nanoscale Architectures |
Keywords | Field | DocType |
CMOS integrated circuits,MOSFET,circuit simulation,content-addressable storage,integrated circuit modelling,memristors,CMOS-based TCAMs,HSPICE simulation,MOSFETs,memristance range,memristor-based TCAM cells,power dissipation,reduced transistor count,search-match operation performance,ternary content addressable memory,voltage threshold,Memory Cell,Memristor,Modeling,TCAM,Ternary Content Addressable Memory | Transistor count,Memristor,Content-addressable memory,Computer science,Parallel computing,Voltage,Electronic engineering,Ternary operation,Memistor,Computer hardware,Resistive random-access memory,Memory cell | Conference |
ISSN | Citations | PageRank |
2327-8218 | 4 | 0.45 |
References | Authors | |
6 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Pilin Junsangsri | 1 | 28 | 5.78 |
| Fabrizio Lombardi | 2 | 1985 | 259.25 |
| Jie Han | 3 | 863 | 66.92 |