Name
Title | ||
|---|---|---|
Strain-induced enhancement of free-carrier effects in SiGe for optical modulator and VOA applications |
Abstract | ||
|---|---|---|
Enhanced free-carrier effects in strained SiGe enable high-efficiency VOA, exhibiting 1/3 of power consumption of Si. The broadband operation from 1.34 to 1.64 μm and error-free operation for 18-dBm 12.5 Gb/s optical signal are obtained. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1364/OFC.2014.Th1C.4 | Optical Fiber Communications Conference and Exhibition |
Keywords | DocType | Citations |
ge-si alloys,internal stresses,optical attenuators,optical modulation,semiconductor materials,sige,voa applications,bit rate 12.5 gbit/s,broadband operation,error-free operation,free-carrier effects,optical modulator,optical signal,power consumption,strain-induced enhancement,strained sige,wavelength 1.34 mum to 1.64 mum,modulation,silicon,attenuation,optical waveguides | Conference | 1 |
PageRank | References | Authors |
0.63 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| younghyun kim | 1 | 4 | 2.34 |
| mitsuru takenaka | 2 | 1 | 0.63 |
| takenori osada | 3 | 1 | 0.63 |
| masahiko hata | 4 | 1 | 0.63 |
| Shinichi Takagi | 5 | 3 | 9.69 |