Paper Info
Title
BOX-less waveguide Ge PD for bulk-Si based silicon photonic platform
Abstract
We present BOX-less waveguide Ge PD for bulk-Si optical interface platform. Despite of defective crystalline of Si-core layer, it shows low dark current (350 nA), high responsivity (1.05 A/W), and high speed operation (25 Gb/s).
Year
DOI
Venue
2014
10.1364/OFC.2014.Th4C.2
Optical Fiber Communications Conference and Exhibition
Keywords
DocType
Citations 
elemental semiconductors,germanium,integrated optics,optical waveguides,photodiodes,silicon,BOX-less waveguide Ge PD,Ge,Si,Si-core layer,bit rate 25 Gbit/s,bulk-Si based silicon photonic platform,bulk-Si optical interface platform,current 350 nA,defective crystalline,high speed operation,low dark current,responsivity
Conference
0
PageRank 
References 
Authors
0.34
0
22
Name
Order
Citations
PageRank
Ji, H.-C.100.34
Cho, K.S.200.34
Lee, B.S.33215.65
Cho, K.Y.421.89
S. H. Choi511512.99
J. H. Kim634.04
Y. H. Shin701.35
S. G. Kim800.34
S. Y. Lee9152.83
H. I. Byun1000.34
S. Parmar1100.34
A. H. Nejadmalayeri1200.34
D. H. Kim13102.34
J. K. Bok1400.68
Y. S. Park1500.34
D. J. Shin16273.64
I. S. Joe1700.34
B. J. Kuh1800.34
B. S. Kim1900.34
K. C. Kim2056785.37
H. M. Choi2100.34
K. H. Ha2200.34