Name
Title | ||
|---|---|---|
14.1 A 0.9V 20.9dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40nm CMOS |
Abstract | ||
|---|---|---|
This paper reports a fully integrated 40nm CMOS PA that utilizes a broadband parallel-series power combiner to achieve an output power (POUT) of 20.9dBm with more than 15GHz small-signal 3dB bandwidth (BW-3dB) and 22% PAE at 0.9V supply. The in-band variation of P1dB is only ±0.25dB. This silicon-based PA covers both 71-to-76GHz and 81-to-86GHz bands with uniform gain, output power and PAE. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/ISSCC.2014.6757420 | Solid-State Circuits Conference Digest of Technical Papers |
Keywords | DocType | ISSN |
cmos integrated circuits,mmic power amplifiers,elemental semiconductors,millimetre wave power amplifiers,power combiners,silicon,cmos pa,e-band power amplifier,si,bandwidth 71 ghz to 76 ghz,bandwidth 81 ghz to 86 ghz,broadband parallel-series power combiner,gain 3 db,silicon-based pa,size 40 nm,voltage 0.9 v | Conference | 0193-6530 |
Citations | PageRank | References |
6 | 0.78 | 1 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Dixian Zhao | 1 | 119 | 18.35 |
| Reynaert, P. | 2 | 6 | 0.78 |