Paper Info
Title
HSPICE macromodel of a Programmable Metallization Cell (PMC) and its application to memory design
Abstract
This paper presents a new HSPICE macromodel of a Programmable Metallization Cell (PMC). The electrical characteristics of a PMC are simulated by using a geometric model that considers the vertical and lateral growth/dissolution of the metallic filament. The selection of the parameters is based on operational features, so the electrical characterization of the PMC is simple, easy to simulate and intuitive. The I-V and R-V plots of a PMC are generated at a very small error compared with experimental data; the proposed model also shows a small error for the relationship between the switching time and the pulse amplitude. The use of a PMC as resistive element in a crossbar memory is also presented; it is shown that a PMC-based crossbar offers substantial improvements over other resistive technologies.
Year
DOI
Venue
2014
10.1109/NANOARCH.2014.6880477
Nanoscale Architectures
Keywords
Field
DocType
SPICE,integrated circuit design,integrated circuit metallisation,integrated circuit modelling,random-access storage,CBRAM,HSPICE macromodel,I-V plots,PMC-based crossbar,R-V plots,conducting bridge random access memory,crossbar memory,electrical characteristics,geometric model,lateral growth-dissolution,memory design,metallic filament,parameter selection,programmable metallization cell,pulse amplitude,resistive element,switching time,vertical growth-dissolution,Conducting Bridge Random Access Memory (CBRAM),Emerging Technology,HSPICE,Modeling,Programmable Metallization Cell (PMC)
Switching time,Computer science,Resistive touchscreen,Geometric modeling,Electronic engineering,Programmable metallization cell,Pulse-amplitude modulation,Crossbar switch
Conference
ISSN
Citations 
PageRank 
2327-8218
3
0.46
References 
Authors
2
3
Name
Order
Citations
PageRank
Pilin Junsangsri1285.78
Fabrizio Lombardi21985259.25
Jie Han386366.92