Name
Title | ||
|---|---|---|
Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk |
Abstract | ||
|---|---|---|
Abstract Extremely narrow and bulk-like p-type InAs–Si nanowire TFETs are studied using (i) a full-band and atomistic quantum transport simulator based on the sp 3 d 5 s ∗ tight-binding model and (ii) a drift–diffusion TCAD tool. As (iii) option, a two-band model and the WKB approximation have been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs–Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/ESSDERC.2014.6948772 | Solid State Device Research Conference |
Keywords | Field | DocType |
III-V semiconductors,field effect transistors,indium compounds,nanowires,silicon,tight-binding calculations,tunnel transistors,InAs-Si,InAs-Si heterojunction nanowire tunnel FET,TCAD tool,WKB approximation,atomistic quantum transport,bulk-like nanowire TFET,drift-diffusion,extreme confinement,extremely narrow TFET,p-type InAs-Si nanowire TFET,tight-binding model,ultra-scaled InAs-Si nanowire TFET | Dispersion (optics),Quantum transport,Chemistry,Electronic engineering,WKB approximation,Heterojunction,Nanowire | Conference |
Volume | ISSN | Citations |
113 | 1930-8876 | 1 |
PageRank | References | Authors |
0.48 | 1 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hamilton Carrillo-Nunez | 1 | 1 | 0.82 |
| Mathieu Luisier | 2 | 56 | 8.55 |
| A. Schenk | 3 | 6 | 4.24 |