Paper Info
Title
Case studies on variation tolerant and low power design using planar asymmetric double gate transistor
Abstract
In nanometer technologies, low power and process variation control have emerged as the first order design goal after high performance. Short channel effects (SCEs) deteriorate the MOSFET performance and lead to higher leakage power. Process variations cause high variability in power consumption and performance of an IC which affects the overall yield. Double gate devices suppress SCEs and are potential candidates for replacing Bulk technology in nanometer nodes. Threshold voltage control in planar asymmetric double gate transistor (IGFET) using a fourth terminal provides an effective means of combating process variations and low power design. In this paper, we analyze the suitability of IGFET for variation control and low power design. We present extensive comparison between IGFET and Bulk for reducing variability, improving yield and leakage power reduction using threshold voltage modulation. BSIM-IMG models were used for IGFET based simulations. Experimental results show that IGFET is highly suitable for adaptive applications and performs better than Bulk while substantially reducing leakage power.
Year
DOI
Venue
2014
10.1109/MWSCAS.2014.6908591
Circuits and Systems
Keywords
Field
DocType
mosfet,low-power electronics,semiconductor device models,bsim-img model,ic performance,igfet-based simulation,mosfet performance,sce,adaptive application,bulk technology,double-gate devices,first-order design,leakage power reduction,low-power design,nanometer nodes,nanometer technology,planar asymmetric double-gate transistor,power consumption,process variation control,process variations,short channel effects,threshold voltage control,threshold voltage modulation,variability reduction,variation-tolerant design,yield improvement
Computer science,Power semiconductor device,Electronic engineering,Planar,Process variation,Transistor,Electrical engineering,Gate driver
Conference
ISSN
Citations 
PageRank 
1548-3746
0
0.34
References 
Authors
6
2
Name
Order
Citations
PageRank
Ajay Singh1446.18
Jiang Hu266865.67