Name
Title | ||
|---|---|---|
High-speed InGaAs photodetectors with low dark current selectively grown on SOI substrate |
Abstract | ||
|---|---|---|
We report selective growth of high crystalline quality InGaAs photodetectors (PDs) with optimized InP/GaAs buffers on patterned SOI substrates by MOCVD. Both waveguide and normal-incidence PDs show low dark current and high-speed performance. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1364/OFC.2014.M2G.2 | Optical Fiber Communications Conference and Exhibition |
Keywords | DocType | Citations |
iii-v semiconductors,mocvd,buffer layers,dark conductivity,gallium arsenide,indium compounds,photodetectors,semiconductor growth,ingaas,inp-gaas,inp/gaas buffers,si,high-speed photodetectors,low dark current,normal-incidence photodetectors,patterned soi substrates,waveguide | Conference | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yu Geng | 1 | 0 | 0.34 |
| Shaoqi Feng | 2 | 0 | 0.34 |
| Poon, A.W. | 3 | 0 | 0.34 |
| Kei May Lau | 4 | 3 | 3.54 |