Name
Abstract | ||
|---|---|---|
A historical overview and recent trends in the research and development of nitride-based light emitters are presented. The growth of GaN using a low-temperature-deposited buffer layer conductivity control, and the use of GaInN alloys, by which nonradiative recombination centers in nitrides are screened, have been employed to fabricate high-efficiency blue and green light-emitting diodes. Today, luminous flux efficiency of up to 50 lm/W at a specific wavelength is available. Electrical pumping has realized commercial laser diodes in the violet and blue regions. Several milestones in the realization of these achievements are reviewed. Future prospects of the nitride-based light emitters are also discussed. |
Year | DOI | Venue |
|---|---|---|
2002 | 10.1109/JPROC.2002.1021566 | Proceedings of the IEEE |
Keywords | DocType | Volume |
III-V semiconductors,MOCVD,aluminium compounds,electroluminescence,gallium compounds,light emitting diodes,reviews,semiconductor lasers,wide band gap semiconductors,AlGaN-GaN,AlGaN/GaN system,EL spectrum,GaInN alloys,GaN growth,III-nitride based optoelectronics,MOVPE growth,UV LED,blue region,conductivity control,electrical pumping,high-efficiency blue light-emitting diodes,high-efficiency green light-emitting diodes,historical overview,laser diodes,low-temperature buffer layers,luminous flux efficiency,nitride-based light emitters,nonradiative recombination centers,violet region | Journal | 90 |
Issue | ISSN | Citations |
6 | 0018-9219 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hiroshi Amano | 1 | 0 | 1.01 |
| Kamiyama, S. | 2 | 0 | 0.34 |
| Akasaki, Isamu | 3 | 0 | 0.34 |