Name
Title | ||
|---|---|---|
A fully integrated 0.18-μm CMOS direct conversion receiver front-end with on-chip LO for UMTS |
Abstract | ||
|---|---|---|
This paper presents a 0.18-μm CMOS direct-conversion IC realized for the Universal Mobile Telecommunication System (UMTS). The chip comprises a variable gain low-noise amplifier, quadrature mixers, variable gain amplifiers, and local oscillator generation circuits. The solution is based on very high dynamic range front-end blocks, a low-power superharmonic injection-locking technique for quadrature generation and continuous-time dc offset removal. Measured performances are an overall gain variable between 21 and 47 dB, 5.6 dB noise figure, -2 dBm out-of-band IIP3, -10 dBm in-band IIP3, 44.8-dBm minimum IIP2, and -155-dBc/Hz phase noise at 135 MHz from carrier frequency, while drawing 21 mA from a 1.8-V supply. |
Year | DOI | Venue |
|---|---|---|
2004 | 10.1109/JSSC.2003.820865 | Solid-State Circuits, IEEE Journal of |
Keywords | DocType | Volume |
3G mobile communication,CMOS integrated circuits,VHF amplifiers,VHF oscillators,frequency convertors,radio receivers,radiofrequency integrated circuits,0.18 mm,1.8 V,135 MHz,21 mA,21 to 47 dB,5.6 dB,CMOS process,UMTS,Universal Mobile Telecommunication System,carrier frequency,continuous-time DC offset removal,direct-conversion IC,dynamic range front-end blocks,fully integrated direct conversion receiver front-end,in-band IIP3,local oscillator generation circuits,low-power superharmonic injection-locking technique,minimum IIP2,on-chip LO,out-of-band IIP3,phase noise,quadrature generation,quadrature mixers,variable gain amplifiers,variable gain low-noise amplifier | Journal | 39 |
Issue | ISSN | Citations |
1 | 0018-9200 | 2 |
PageRank | References | Authors |
0.44 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Gatta, F. | 1 | 9 | 2.20 |
| Manstretta, D. | 2 | 5 | 0.89 |
| Rossi, P. | 3 | 24 | 2.94 |
| Svelto, F. | 4 | 2 | 0.78 |