Name
Abstract | ||
|---|---|---|
This paper presents a fully symmetrical sense amplifier topology for advanced non-volatile memories. The proposed structure ensures zero systematic offset, together with adequate rejection of disturbs coming from capacitive coupling with noisy substrate, power supply, and ground. The presented topology has been designed for phase change memories, however, it is also suitable for use in other non-volatile storage devices such as magnetic RAMs and Flash memories. Experimental results on sensing time, offset, and sensitivity demonstrated the effectiveness of the proposed scheme. |
Year | DOI | Venue |
|---|---|---|
2004 | 10.1109/ISCAS.2004.1329349 | Circuits and Systems, 2004. ISCAS '04. Proceedings of the 2004 International Symposium |
Keywords | Field | DocType |
amplifiers,flash memories,integrated circuit design,integrated circuit testing,network topology,random-access storage,capacitive coupling,flash memories,fully symmetrical sense amplifier topology,magnetic RAM,noisy substrate,nonvolatile memories,nonvolatile storage devices,phase change memories,sensitivity,zero systematic offset | Sense amplifier,Phase change,Computer science,Electronic engineering,Network topology,Integrated circuit design,Capacitive coupling,Offset (computer science),Amplifier | Conference |
Volume | ISBN | Citations |
2 | 0-7803-8251-X | 4 |
PageRank | References | Authors |
0.89 | 1 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Bedeschi, F. | 1 | 4 | 0.89 |
| Edoardo Bonizzoni | 2 | 162 | 47.30 |
| Osama Khouri | 3 | 41 | 14.44 |
| Resta, C. | 4 | 4 | 0.89 |