Name
Abstract | ||
|---|---|---|
A variety of low-power global shutter (snapshot) and rolling shutter active pixel sensors (APS) in silicon-on-sapphire (SOS) technology are presented. Utilizing the floating gate NMOS photodetector, operating in a lateral bipolar transistor (LBT) mode, the described imagers are expected to achieve high responsivity and are mostly suitable for low-power applications. The proposed global shutter sensors enable imaging of fast moving objects in the field of view. Power dissipation of the proposed imagers is reduced by employing an advanced gate-diffusion input (GDI) technique, used for the sensor digital periphery implementation. A test chip, consisting of four different 32×32 global shutter and rolling shutter image sensor arrays, operating at a power supply ranging from 1.2 V to 3 V, has been implemented in a Peregrine's 0.5 μm SOS technology. System architectures and operation of the presented imagers are discussed, and a comparison with existing APS structures is presented as well. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1109/ISCAS.2005.1464654 | ISCAS (1) |
Keywords | Field | DocType |
bipolar transistors,digital integrated circuits,image sensors,photodetectors,semiconductor technology,silicon-on-insulator,0.5 micron,1.2 to 3 V,Al2O3,Si,active pixel sensors,fast moving object imaging,floating gate NMOS photodetector,gate-diffusion input technique,global shutter image sensor,lateral bipolar transistor mode,rolling shutter image sensor,sensor digital periphery,silicon-on-sapphire technology | Rolling shutter,Image sensor,Responsivity,NMOS logic,Computer science,Shutter,Photodetector,CMOS,Electronic engineering,Electrical engineering,Silicon on sapphire | Conference |
ISSN | ISBN | Citations |
0271-4302 | 0-7803-8834-8 | 1 |
PageRank | References | Authors |
0.43 | 2 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Alexander Fish | 1 | 123 | 21.24 |
| Evgeny Avner | 2 | 1 | 0.43 |
| Orly Yadid-Pecht | 3 | 230 | 35.79 |